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MZ-VAP4T0BW
  • MZ-VAP4T0BW

MZ-VAP4T0BW - W129162467

W129162467
Samsung

Samsung MZ-VAP4T0, 4 TB, M.2, 14800 MB/s

CHF694.2
Tax included
CHF642.2 Tax excluded
Delivery in 4-5 days
Quantity
In stock
331 Items

Description
Breakthrough PCIe® 5.0 performance
Push PCIe® 5.0 performance to the max. 9100 PRO achieves lightning-fast sequential read/write speeds up to 14,800/13,400 MB/s, two times faster than 990 PRO. Leave Gen4 limits behind with random read/write speeds up to 2,200K/2,600K IOPS, only possible by Gen5.

Impressive processing power
Speed past productivity limits. Exhilarating random read/write speeds enable ultra-fast parallel processing for countless fragmented data, at up to 2,200K/2,600K IOPS. Experience superior output and instant loads for huge games, high-performance tasks, and even AI applications.

Rapid AI creation
Intelligence redefines performance. Defy your limits in work and play with an on-board AI PC and AI content generation, fuelled by 9100 PROs exhilarating random read/write speeds up to 2,200K/2,600K IOPS. Swift loads, smooth gameplay, seamless performance.

Exceptional performance at your fingertips
Elevate your competitive edge. Breeze through video editing, 3D art, and even long streaming sessions with the latest PCIe® 5.0 interfaces. Experience cutting-edge performance anytime, anywhere, on any device, and choose the storage you need with expansive capacity up to 8TB.

Extraordinary thermal efficiency
Peak performance, uninterrupted. The advanced 5nm controller power architecture enhances power efficiency up to 49% over 990 PRO. Exceptional thermal control ensures nothing disrupts your flow, so you can keep the most demanding programs running with the max possible power of PCIe® 5.0.

Samsung Magician software
Make your SSD work like magic. Samsung Magician software's optimisation tools ensure the best SSD performance. It's a safe and easy way to migrate all your data for a Samsung SSD upgrade. Protect valuable data, monitor drive health, and get the latest firmware updates.

Bringing innovations to life
For decades, Samsungs NAND flash memory has powered groundbreaking technologies that have changed every part of our daily lives. This NAND flash technology also powers our consumer SSDs, making room for the next big push of innovation.

PCIe® 5.0 Performance
Max 14,800/13,400 MB/s sequential speeds,two times faster than 990 PRO.

Advance your gameplay
Mega capacity with exceptional compatibility.

Innovative Power & Thermal Control
Up to 49% enhanced power efficiency with advanced thermal control.

Samsung MZ-VAP4T0. SSD capacity: 4 TB, SSD form factor: M.2, Read speed: 14800 MB/s, Write speed: 13400 MB/s, Component for: PC/Game console
SSD capacity4 TB
SSD form factorM.2
InterfacePCI Express 5.0
NVMeYes
Memory typeV-NAND TLC
Component forPC/Game console
Hardware encryptionYes
NVMe version2.0
Security algorithms256-bit AES
M.2 SSD size2280 (22 x 80 mm)
Read speed14800 MB/s
Write speed13400 MB/s
Random read (4KB)2200000 IOPS
Random write (4KB)2600000 IOPS
PCI Express interface data lanesx4
DevSlp (device sleep) supportYes
S.M.A.R.T. supportYes
TRIM supportYes
Mean time between failures (MTBF)1500000 h
Operating voltage3.3 V
Average power consumption (read)9 W
Average power consumption (write)8.2 W
Width3.16" (80.2 mm)
Depth0.0937" (2.38 mm)
Height0.872" (22.1 mm)
Weight0.317 oz (9 g)
Package typeBox
Operating temperature (T-T)0 - 70 °C
Operating shock1500 G
Warranty period5 year(s)
Product Details
W129162467
331 Items
New

Data sheet

SSD capacity
4 TB
SSD form factor
M.2
Interface
PCI Express 5.0
NVMe
Yes
Component for
PC/Game console
Package type
Box
Weight
0.317 oz (9 g)
Operating voltage
3.3 V
Width
3.16" (80.2 mm)
Height
0.872" (22.1 mm)
M.2 SSD size
2280 (22 x 80 mm)
Depth
0.0937" (2.38 mm)
Memory type
V-NAND TLC
Warranty period
5 year(s)
Operating temperature (T-T)
0 - 70 °C
Read speed
14800 MB/s
Write speed
13400 MB/s
PCI Express interface data lanes
x4
Security algorithms
256-bit AES
Mean time between failures (MTBF)
1500000 h
Operating shock
1500 G
Random read (4KB)
2200000 IOPS
Random write (4KB)
2600000 IOPS
Hardware encryption
Yes
S.M.A.R.T. support
Yes
TRIM support
Yes
NVMe version
2.0
DevSlp (device sleep) support
Yes
Average power consumption (read)
9 W
Average power consumption (write)
8.2 W

Specific References

UPC
887276904979
EAN13
8806095811703
MPN
MZ-VAP4T0BW
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