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All best sellers
TS512MSH64V6D
  • TS512MSH64V6D
  • TS512MSH64V6D

TS512MSH64V6D

Transcend
Transcend DDR4, 2666 MHz, 4GB, SO-DIMM, 1Rx16, (512Mx16)x4, 1.2V
CHF189.9
Tax included
CHF175.7 Tax excluded
Delivery in 4-5 days
Quantity
Last items in stock
1 Item

Description
Transcend's DDR4 DRAM modules operate at a nominal voltage of just 1.2V, offering higher energy efficiency and exceptional clock speeds to cater to the demands of the embedded industry. The modules are available in multiple form factors and technologies, such as ECC and wide-temperature support. All components are of the highest quality, having been sourced directly from the world's first-tier supplier of DRAM chips and stringently tested for unparalleled compatibility, reliability, and performance.
  • JEDEC standard 1.2V ± 0.06V power supply
  • High energy efficiency
  • 8 bit pre-fetch
  • Burst Length: 4, 8
  • 16 Banks (4 Bank Groups)
  • Support DBI mode
  • Support Command/Address parity detection
  • Support Data Cyclic Redundancy Check (CRC) for improved data reliability
  • On-die termination with ODT pin
  • Serial presence detect with EEPROM
  • 100% tested for stability, compatibility and performance

Specifications

Features

CAS latency19
Component forNotebook
ECCNo
Internal memory4 GB
Internal memory typeDDR4
Memory clock speed2666 MHz
Memory form factor260-pin SO-DIMM
Memory layout (modules x size)1 x 16 GB
Memory ranking1
Memory voltage1.2 V
Module configuration512M x 16

Operational conditions

Operating temperature (T-T)0 - 85 °C

Vendor information

Brand NameTranscend
Warranty1
Product Details
1 Item
New

Data sheet

ECC
No
Speicherformfaktor
260-pin SO-DIMM
Speicherspannung
1.2 V
CAS-Latenz
19
Modulkonfiguration
512M x 16
Speicher-Ranking
1
Interner Speichertyp
DDR4
Speicherlayout (Module x Größe)
1 x 16 GB
Speichertaktfrequenz
2666 MHz
Brand Name
Transcend
Warranty
1
Komponente für
Notebook
Betriebstemperatur (TT)
0 - 85 °C
Interner Speicher
4 GB

Specific References

MPN
TS512MSH64V6D
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